Dr. Stephan Lutgen is an entrepreneurial executive with >18 years of opto-electronic semi-conductor products experience in international production, engineering and business development.
Successful fundraising of >16 Mio.€ and coordination of EU- and national R&D-projects.

He developed a variety of commercial opto-electronic products ranging from LEDs, V(E)CSEL and edge emitting IR and visible lasers for communication, illumination, sensing, material processing and rgb-laser-projection at Siemens & Osram OS and GaN-on-Si based LED & HEMT for next generation solid state lighting & power electronic applications at AZZURRO.
Stephan is working closely with key customers and leading multi-disciplinary and cultural team as an expert in personal management, coaching and project leading of strategic development with a strong technical III-V-semiconductor background and MOVPE experience.

Leading the GaN-based laser research & development group at Osram OS, his team was awarded for their pioneering work on direct green InGaN-based laser diodes.
He joined AZZURRO in 2011 as CTO/Vice President of Technology and IP Management.
He was heading the international research & development team for GaN-on-Si based wafer technology up to 200mm wafer diameter for LED and PowerElectronic applications.

Since Oct. 2013 he is working as an cleantech-consultant for Opto-(Laser, LED, sensor) and Electronic-(GaN-based RF+Power) semiconductor industry.

Based on his expertise, he works for national and EU organizations as a consultant and adviser.

Dr. Stephan Lutgen, Dr. Desiree Queren, Dr. Adrian Avramescu were awarded with the Karl Heinz Beckurts award 2010 for their pioneering work on direct green InGaN-Laser.

Philipps-University, Marburg
Diploma Physics
1987 –1993

Humboldt-University, Berlin
Dr. rer. nat. Physics
1994 –1997

III-V Consulting
Oct 2013 – today  Dresden, Germany

Consulting service for Cleantech-, Opto-(Laser, LED, sensor) and Electronic-(GaN-based RF+Power) semiconductor industry.

AZZURRO Semiconductors AG
July 2011 – Oct. 2013 (2 years 4 months) Dresden, Germany

Heading as Vice President of Technology the international research & development team for GaN-on-Si based LED and Power-Electronic (>600V normally on/off HEMT, SBD…) wafer tech-nology up to 200mm and the IP Management group. Responsible for technical relationship and due diligence of investors and the worldwide FAE customer support.
Budget: 3.5Mio.€/year. Personal and technical leadership: 8 people

Osram Opto Semiconductors AG
2008 – June 2011 (3 years) Regensburg, Germany

R&D Manager for GaN based laser diodes from NUV(400nm), blue(440-470nm) to green (515-530nm). Leading epitaxy-, chip- and packaging teams, including design-qualifications and transfers of nitride based lasers in TO-packages into production. Responsible for different R&D-projects and operations, also with external fundings (BMBF, EU) and drive customer orientated target specifications and specific solutions.
Budget: 7Mio.€/year. Personal and technical leadership: 15 people

Osram Opto Semiconductors AG
2005 – 2007 (2 years) Regensburg, Germany

Project Leader for blue InGaN-based Laser diodes, R&D and transfer into production, including design&simulation, epitaxy, chip technology and TO-package, technical key expert for nitride based MOVPE
Budget: 4.6Mio.€/year. Technical leadership: 15 people

Osram Opto Semiconductors AG
2000 – 2004 (4 years) Regensburg, Germany

Project leader for optically pumped GaAs-based disc lasers for rgb-laser projection and technical key expert for MOVPE.
Budget: 1.2Mio.€/year. Technical leadership: 5 people

Siemens AG
Sep. 1997 – 2000 (3 years) Regensburg, Germany

Responsible for GaAs-MOVPE-team and IR-products (LED, Power laser/bar, VCSEL)